Reliability of CVD Cu buried interconnections

Author

Cho, J.S.H. ; Ho-Kyu Kang ; Changsup Ryu ; Wong, S.S.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

265

Lastpage

268

Abstract

CVD Cu, which is both highly conductive and reliable, has been investigated as an interconnection material. Cu/sup 1+/ (hfac)(tmvs) is the precursor used in this work. Excellent conformality, which is required for reliable high aspect ratio buried interconnection, has been observed and quantified by simulations. Cu diffusion through TiW as thin as 25 nm has been investigated using large area diodes. Drift of Cu through various dielectrics has been observed, demonstrating the necessity of diffusion barriers. Electromigration studies indicate that Cu interconnections are more reliable than Al alloys.<>

Keywords

VLSI; chemical vapour deposition; circuit reliability; copper; electromigration; integrated circuit technology; metallisation; CVD; Cu; Cu buried interconnections; aspect ratio; conformality; diffusion barriers; electromigration studies; interconnection material; large area diodes; Capacitors; Conducting materials; Copper alloys; Dielectric materials; Diodes; Dry etching; Electromigration; Materials reliability; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347355

Filename

347355