Performance of a 0.13 μm SOI integrated 60 GHz dipole antenna

This work presents the design of a 60 GHz fully integrated dipole antenna on 0.13 mum silicon on insulator (SOI) substrate. A conductor backed coplanar waveguide balun has been designed on the top level layer to assure compatibility with the test devices. The CBCPW balun is completely characterized on SOI substrate for subsequent de-embedding of the antenna impedance. SOI substrate effect has been compensated by the introduction of an interdigitated capacitor to allow good dipole matching impedance at 60 GHz over a bandwidth of 8%. Backside substrate metallization has been used to improve radiation properties. The resulting simulated radiation efficiency is 85% with a gain around 4.5 dBi.