DocumentCode :
2314447
Title :
High performance dielectrics and processes for ULSI interconnection technologies
Author :
Paraszczak, J. ; Edelstein, D. ; Cohen, S. ; Babich, E. ; Hummel, J.
Author_Institution :
Semicond. & Res. Dev. Center, IBM Corp., East Fishkill, NY, USA
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
261
Lastpage :
264
Abstract :
One method of improving the performance of silicon integrated circuits is to reduce the delay of the interconnections between individual devices by reducing the resistance and capacitance of the connection. Even though it is possible to replace the commonly used aluminium conductors in current interconnection technologies with copper, no company has done so in production, due to a series of unanswered questions pertaining to the cost and leverage of doing so. This paper will attempt to elucidate the performance and cost benefits of this approach and will try to identify and resolve some of the important integration issues related to the inclusion of polymers and copper conductors into ULSI interconnections.<>
Keywords :
VLSI; dielectric thin films; integrated circuit technology; metallisation; monolithic integrated circuits; ULSI interconnection technologies; copper conductors; cost benefits; delay; integration issues; polymers; silicon integrated circuits; Aluminum; Capacitance; Conductors; Copper; Delay; Dielectrics; Integrated circuit interconnections; Integrated circuit technology; Silicon; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347356
Filename :
347356
Link To Document :
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