DocumentCode :
2314484
Title :
Polysilicon resistor trimming for packaged integrated circuits
Author :
Babcock, J.A. ; Feldbaumer, D.W. ; Mercier, V.M.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
fYear :
1993
fDate :
5-8 Dec. 1993
Firstpage :
247
Lastpage :
250
Abstract :
Pulse current trimming to adjust values of polysilicon resistors has been investigated for use in full scale IC production. The technique is remarkably accurate, layout efficient, quick and inexpensive from a test perspective, and requires no additional process complexity. The trim process is shown to be reversible to a small, but usable extent for n-type polysilicon. A new physical model consistent with all observations for resistance trim and recovery is presented. Finally, reliability results from extensive burn-in show the trimmed resistors to be exceptionally robust.<>
Keywords :
circuit reliability; elemental semiconductors; integrated circuit technology; monolithic integrated circuits; resistors; silicon; IC processing; Si; burn-in; full scale IC production; monolithic ICs; n-type polysilicon; packaging; physical model; polysilicon resistor trimming; pulse current trimming; reliability results; Annealing; Current density; Implants; Integrated circuit packaging; Pulse measurements; Resistors; Semiconductor device packaging; Temperature; Thermal conductivity; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-1450-6
Type :
conf
DOI :
10.1109/IEDM.1993.347359
Filename :
347359
Link To Document :
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