A study for thermoelectric properties of Ni doped SiC sintered thermoelectric semiconductor

Author

Okamoto, Yoichi ; Kato, Kazuhiko ; Morimoto, Jun ; Miyakswa, T.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Defense Acad., Kanagawa, Japan

fYear

1997

fDate

26-29 Aug 1997

Firstpage

236

Lastpage

239

Abstract

The thermoelectric properties of the p-type SiC:Ni sintered thermoelectric semiconductor have been studied as functions of Ni concentration (from 0.5 wt.96 to 5.0 wt.95) and temperature (from RT to 700°C). The electrical resistivity decreases drastically for all the Ni concentration range compared with other dopants such as Cu, Al and B at room temperature. The electrical resistivity and thermoelectric power decrease with increasing temperature. The value of the figure of merit Z approaches 1.4×10^-4 at around 700°C. The condition of the doped impurity atom Ni has also been studied magnetically. It is confirmed that Ni does not segregate in the SiC sintered sample. We conclude that Ni is well diffused into SiC and it is one of the most effective dopants for SiC-based thermoelectric materials

Keywords

electrical resistivity; impurity distribution; nickel; semiconductor materials; silicon compounds; thermoelectric power; 20 to 700 degC; Ni concentration dependence; SiC:Ni; electrical resistivity; figure of merit; p-SiC:Ni; room temperature; sintered thermoelectric semiconductor; temperature dependence; thermoelectric power; thermoelectric properties; Electric resistance; Inorganic materials; Magnetic materials; Magnetic properties; Magnetic variables measurement; Semiconductor materials; Silicon carbide; Temperature distribution; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on

Conference_Location

Dresden

ISSN

1094-2734

Print_ISBN

0-7803-4057-4

Type

conf

DOI

10.1109/ICT.1997.667093

Filename

667093