Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures

A study is presented of multi-carrier electronic transport parameters in HgCdTe films extracted through use of advanced mobility spectrum analysis techniques. It is shown that even in single layer long-wave infrared HgCdTe epitaxial films three well-defined electron species associated with the surface, bulk and substrate-interface regions can be accurately discriminated. Furthermore, it is also shown that the application of high-resolution quantitative mobility spectrum analysis techniques allows the accurate extraction of the individual transport parameters of carriers in complex multilayer HgCdTe heterostructures.