Title :
Enhanced performance of multi-GHz PLL LSIs using sub-1/4-micron gate ultrathin film CMOS/SIMOX technology with synchrotron X-ray lithography
Author :
Kado, Y. ; Ohno, T. ; Harada, M. ; Deguchi, K. ; Tsuchiya, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A phase-locked loop (PLL) LSI containing a multi-GHz prescaler has been fabricated using 0.24-/spl mu/m-gate ultrathin-film CMOS/SIMOX technology combined on a trial basis with synchrotron radiation X-ray (SR) lithography. While operating at up to 2.2 GHz and consuming only 4.5 mW at 1.5 V, it is capable of 4-GHz performance with power consumption of 19 mW at 2.5 V. Even at a low supply voltage of 1.5 V, high input-sensitivity was also achieved in the 1- to 2-GHz frequency range. These results suggest that sub-quarter-micron CMOS/SIMOX device structures could find a place in extremely low-power LSIs containing ultra-high-speed circuits.<>
Keywords :
CMOS integrated circuits; SIMOX; VLSI; X-ray lithography; integrated circuit technology; linear integrated circuits; phase-locked loops; 0.24 micron; 1.5 to 2.5 V; 2.2 to 4 GHz; 4.5 to 19 mW; PLL LSIs; high input-sensitivity; low supply voltage; low-power LSIs; multi-GHz prescaler; phase-locked loop; power consumption; synchrotron X-ray lithography; ultra-high-speed circuits; ultrathin film CMOS/SIMOX technology; CMOS technology; Circuits; Energy consumption; Frequency; Large scale integration; Lithography; Low voltage; Phase locked loops; Strontium; Synchrotron radiation;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347360
