Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers

Author

Wang, H. ; Ton, T.N. ; Lai, R. ; Lo, D.C.W. ; Chen, S. ; Streit, D. ; Dow, G.S. ; Tan, K.L. ; Berenz, J.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

239

Lastpage

242

Abstract

This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device noise; solid-state microwave devices; 2.6 dB; 27 dB; 43 mW; 5 dB; 6 mW; 7 dB; 80 to 100 GHz; 94 GHz; 96 GHz; DC power consumption; InAlAs-InGaAs-InP; W-band monolithic amplifiers; four-stage amplifier; noise figure; one-stage amplifier; pseudomorphic HEMT; small signal gain; Energy consumption; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Noise figure; Power measurement; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347361

Filename

347361