Passivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison

Author

Li, T.-T.A. ; Cuevas, A. ; Tan, J. ; Samundsett, C. ; Saynova, D. ; Geerligs, B.

Author_Institution

Sch. of Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

125

Lastpage

126

Abstract

We show that boron-diffused emitters can be passivated with AlO_x deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO₂ interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of J_oE=228-349 fA/cm² for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.

Keywords

boron; current density; electron-hole recombination; elemental semiconductors; heavily doped semiconductors; passivation; plasma CVD; silicon; silicon compounds; solar cells; sputter deposition; surface resistance; Al target; AlO_x; RF sputtering; Si:B; SiN; SiO₂; boron-diffused emitters; chemically grown silica interfacial layer; emitter recombination current densities; highly boron doped silicon surfaces; optimised PECDV SiN process; passivation levels; sheet resistances; solar cell; sputtered AlO_x; surface passivation; Atomic layer deposition; Resistance; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699694

Filename

5699694