DocumentCode
2314614
Title
An improved structure of a-SiC:H thin film p-i-n junction LED
Author
Chen Zhiming ; Pu Hongbing ; Yu Mingbing ; Lei Tianmin
Author_Institution
Shaanxi Inst. of Mech. Eng., China
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
221
Lastpage
224
Abstract
The brightness and the threshold voltage of a-SiC:H thin film p-i-n junction LEDs have been remarkably improved by an extra n-type uc-Si:H thin layer inserted between the back electrode and the n-type a-SiC:H injection layer. It has also been demonstrated that the characteristics of a-SiC:H LEDs can be reformed by replacing methane with ethylene in the reaction gas mixture for a-SiC:H deposition.<>
Keywords
amorphous semiconductors; brightness; hydrogen; light emitting diodes; p-i-n diodes; plasma CVD; semiconductor growth; silicon compounds; SiC:H; a-SiC:H; back electrode; brightness; ethylene; injection layer; plasma deposition; reaction gas mixture; thin film p-i-n junction LED; threshold voltage; Brightness; Electrodes; Light emitting diodes; PIN photodiodes; Plasma displays; Semiconductor thin films; Silicon carbide; Sputtering; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347365
Filename
347365
Link To Document