In-situ acoustic thermometry and tomography for rapid thermal processing

Author

Yong Jin Lee ; Degertekin, F.L. ; Jun Pei ; Khuri-Yakub, T. ; Saraswat, K.C.

Author_Institution

Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

187

Lastpage

190

Abstract

Temperature dependent velocity of acoustic waves guided by the silicon wafer is used to measure its temperature from 20/spl deg/C to 1000/spl deg/C with attainable accuracy of /spl plusmn/1/spl deg/C. The acoustic temperature sensor has been installed and tested in a rapid thermal processing environment. Temperature mapping is obtained by measuring the acoustic wave velocity along different paths on the wafer and applying tomographic inversion techniques.<>

Keywords

acoustic imaging; acoustic transducers; acoustic wave velocity; elemental semiconductors; rapid thermal processing; silicon; temperature measurement; 20 to 1000 C; Si; acoustic temperature sensor; acoustic thermometry; acoustic tomography; guided acoustic wave velocity; in-situ measurement; rapid thermal processing; silicon wafer; temperature mapping; tomographic inversion; Acoustic measurements; Acoustic testing; Acoustic waves; Rapid thermal processing; Silicon; Temperature dependence; Temperature measurement; Temperature sensors; Tomography; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347369

Filename

347369