Title :
Monolithic CCD time-delay-and-integrate arrays in HgCdTe
Author :
Wadsworth, M.V. ; Borrello, S. ; Dodge, J. ; Gooch, R. ; McCardel, W. ; Nado, G. ; Shilhanek, M.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Charge-coupled device (CCD) infrared detector arrays in 5 /spl mu/m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Performance data indicates the monolithic CCD to be a viable alternative to present hybrid focal plane array technology.<>
Keywords :
CCD image sensors; II-VI semiconductors; cadmium compounds; delay circuits; infrared imaging; mercury compounds; 5 micron; HgCdTe; HgCdTe chip; buffer amplification; charge-to-voltage conversion; infrared detector; low background applications; monolithic CCD arrays; serial readout multiplexing; time-delay-and-integrate detection; Charge coupled devices; Charge transfer; Clocks; Diodes; Infrared detectors; Integrated circuit noise; Multiplexing; Optical amplifiers; Optical buffering; Sensor arrays;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347371
