Terahertz heterodyne detection with silicon CMOS transistors

Author

Glaab, D. ; Lisauskas, A. ; Boppel, S. ; Pfeiffer, U. ; Öjefors, E. ; Roskos, H.G.

Author_Institution

Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt, Germany

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We report on heterodyne detection of 0.65-THz radiation with silicon CMOS transistors. With a fairly low local-oscillator power of -27 dBm delivered to the detector, we measure a noise power of -111 dBm/Hz. The 3-dB sensitivity roll-off of the intermediate frequency (IF) is as high as 750 kHz. The detectors exhibit an almost frequency-independent signal-to-noise ratio of 45 dB over the whole measured IF frequency range (70 kHz-24 MHz).

Keywords

CMOS integrated circuits; MOSFET; heterodyne detection; oscillators; terahertz wave detectors; THz radiation detectors; frequency 0.65 THz; frequency 70 kHz to 24 MHz; frequency 750 kHz; frequency-independent signal-to-noise ratio; low local-oscillator; silicon CMOS transistors; terahertz heterodyne detection; CMOS technology; FETs; Frequency measurement; Noise measurement; Optical imaging; Radiation detectors; Semiconductor device noise; Sensor arrays; Signal to noise ratio; Silicon radiation detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324602

Filename

5324602