• DocumentCode
    2314794
  • Title

    A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

  • Author

    Manning, T.J. ; Hardy, T. ; Merklein, M. ; Wintrebert-Fouquet, M. ; Phillips, M.R.

  • Author_Institution
    Microstruct. Anal. Unit, Univ. of Technol., Sydney, NSW, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    139
  • Lastpage
    140
  • Abstract
    Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K).
  • Keywords
    III-V semiconductors; cathodoluminescence; electron beam effects; gallium compounds; magnesium; radiation quenching; wide band gap semiconductors; GaN:Mg; LEEBI; acceptor activation mechanism; donor-acceptor pair; free-bound transition; liquid nitrogen temperatures; low energy electron beam irradiation; quenching; room temperature cathodoluminescence emission; temperature 293 K to 298 K; temperature 77 K; temperature 80 K; Gallium nitride; Monitoring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699705
  • Filename
    5699705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2314794