Effect of very low power inductively coupled plasma etching on ohmic contacts to p-GaN

Author

Baharin, A. ; Pinto, R.S. ; Mishra, U.K. ; Nener, B.D. ; Parish, G.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

145

Lastpage

146

Abstract

We report on the electrical characterisation of etched Mg-doped p-GaN layers using low power inductively coupled plasma reactive ion etching (ICP-RIE). Although the quality of ohmic contacts to p-GaN is generally degraded by plasma etching, the results, assessed by current-voltage characteristics and Transmission Line Model (TLM) analysis, indicate that the ohmic contacts improve significantly as the power is reduced from ICP/RF power of 150/75 W to very low ICP/RF power of 40/20 W.

Keywords

III-V semiconductors; gallium compounds; magnesium; ohmic contacts; semiconductor doping; sputter etching; transmission lines; wide band gap semiconductors; AlO₃; GaN:Mg; ICP-RF power; ICP-RIE; TLM; current-voltage characteristics; electrical characterisation; etched Mg-doped p-GaN layers; inductively coupled plasma reactive ion etching; ohmic contacts; plasma etching; power 150 W; power 20 W; power 40 W; power 75 W; power reduction; transmission line model; Annealing; Etching; Gallium nitride; Iterative closest point algorithm; Ohmic contacts; Plasmas; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699708

Filename

5699708