Title :
First-principle study on coupling between arsenic in-suit impurities and mercury vacancies in HgCdTe
Author :
Huang, Y. ; Chen, X.S. ; Zhou, X.H. ; Wang, X.F. ; Wang, L. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
By using first-principle energy calculations, we found that the coupling structures between As in-suit substitute impurities and Hg vacancy in HgCdTe having p-type characteristics no matter As in-suit substitute Hg or Te atom. However, the characteristics of the coupling structures between As in-suit interstitial atom and mercury vacancy depend on the relative site of the interstitial atom.
Keywords :
Fermi level; II-VI semiconductors; ab initio calculations; arsenic; cadmium compounds; impurities; interstitials; mercury compounds; semiconductor doping; vacancies (crystal); Fermi level; HgCdTe:As; arsenic in-suit impurities; coupling structures; first-principle energy calculations; in-suit interstitial atom; mercury vacancies; p-type characteristics; Conductors; Doping; Impurities; Infrared detectors; Materials science and technology; Mercury (metals); Neural networks; Physics; Sun; Tellurium;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324609
