Title :
High performance 0.1 /spl mu/m CMOS devices with 1.5 V power supply
Author :
Taur, Y. ; Wind, S. ; Mii, Y.J. ; Lii, Y. ; Moy, D. ; Jenkins, K.A. ; Chen, C.L. ; Coane, P.J. ; Klaus, D. ; Bucchignano, J. ; Rosenfield, M. ; Thomson, M.G.R. ; Polcari, M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper presents the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup +/ polysilicon gates on 35 /spl Aring/-thick gate oxide. A 22 ps/stage CMOS-inverter delay is obtained at a power supply voltage of 1.5 V. The highest unity-current-gain frequencies (f/sub T/) measured are 118 GHz for nMOSFET, and 67 GHz for pMOSFET.<>
Keywords :
CMOS integrated circuits; elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; integrated logic circuits; silicon; 0.1 micron; 1.5 V; 22 ps; CMOS devices; Si; characterization; dual n/sup +p/sup +/ polysilicon gates; fabrication; inverter delay; CMOS technology; Delay; Doping; Etching; Implants; MOSFET circuits; Power supplies; Resists; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347383
