Title :
Fabrication and characterisation of an induced ambipolar device on AlGaAs/GaAs Heterostructures
Author :
Chen, J.C.H. ; Klochan, O. ; Micolich, AP ; Hamilton, AR ; Gupta, K. Das ; Sfigakis, F. ; Ritchie, D.A. ; Trunov, K.V. ; Reuter, D. ; Wieck, A.D.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
In this study a metal-insulator semiconductor field effect transistor (MISFET) was fabricated on an undoped (100)-oriented AlGaAs/GaAs heterostructure. This device has the ability to switch the charge carriers in the conduction channel between electrons and holes by switching the sign of the applied top gate voltage. The device was characterised at 0.3K and electron/hole transport measurements were conducted. In the future these devices could potentially be used as lateral p-i-n junctions for fabrication of low dimensional electroluminescent devices.
Keywords :
III-V semiconductors; MISFET; aluminium compounds; gallium arsenide; semiconductor heterojunctions; AlGaAs-GaAs; MISFET; charge carrier switching; conduction channel; electron-hole transport; induced ambipolar device; metal-insulator semiconductor field effect transistor; temperature 0.3 K; top gate voltage; undoped (100)-oriented heterostructures; Charge carrier processes; Epitaxial layers; Gallium arsenide; Microwave integrated circuits; Modulation; Semiconductor device measurement; Switches;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699713
