DocumentCode
2314954
Title
An efficient simulation method for linking bipolar process and device optimization to circuit performance
Author
Hurkx, G.A.M. ; Baltus, P.G.M. ; Bladt, E.P.M. ; Knuvers, M.P.G.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
105
Lastpage
108
Abstract
An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.<>
Keywords
bipolar integrated circuits; circuit analysis computing; semiconductor process modelling; bipolar process; circuit performance; circuit simulation; device optimization; model parameters; scaling; simulation; Circuit optimization; Circuit simulation; Geometry; Integrated circuit modeling; Joining processes; Laboratories; Optimization methods; Parameter extraction; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347388
Filename
347388
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