Title :
A SOI CMOS Hall effect sensor architecture for high temperature applications (up to 300°C)
Author :
Portmann, Lionel ; Ballan, Hussein ; Declercq, Michel
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
The design of a 5 V fully integrated magnetic sensor able to operate up to 270°C is presented. Fabricated in a Partially Depleted (PD) 1 μm SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.
Keywords :
CMOS analogue integrated circuits; Hall effect transducers; compensation; digital readout; high-temperature electronics; magnetic sensors; silicon-on-insulator; 1 micron; 300 degC; 5 V; 8 bit; A/D converter; ADC; Hall plate offset cancellation; SOI CMOS Hall effect sensor architecture; Si; amplifier stage; analog techniques; continuous temperature compensation; high temperature applications; integrated magnetic sensor; magnetic field; monolithic sensor; partially depleted SOI process; resistive Hall plate; temperature stabilized digital readout; Doping; Geometry; Hall effect devices; Low-frequency noise; Magnetic field measurement; Magnetic sensors; Switches; Temperature sensors; Thin film sensors; Voltage;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037326
