Title :
Deep-level transient spectroscopy study of channelled boron implantation in silicon.
Author :
Deam, L. ; Johnson, B.C. ; McCallum, J.C.
Author_Institution :
Australian Res. Council Centre of Excellence for Quantum Comput. Technol., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Boron ions will be implanted at 150 keV down the <;100>; axis of n-type silicon. Deep-level transient spectroscopy will be used to study the range, concentration and species of the created defects. A comparison to crystal-TRIM results will be made in order to refine model parameters.
Keywords :
boron; channelling; crystal defects; deep level transient spectroscopy; elemental semiconductors; ion implantation; semiconductor doping; silicon; Si:B; boron ions; channelled boron implantation; concentration defects; crystal-TRIM results; deep-level transient spectroscopy; electron volt energy 150 keV; model parameters; n-type silicon; Boron; Ions; Physics; Semiconductor device modeling; Silicon; Spectroscopy; Transient analysis;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699715
