Title :
A new, efficient approach to the large-scale thermal modeling of III-V devices and integrated circuits
Author :
Bonani, Fabrizio ; Ghione, G. ; Pirola, M. ; Naldi, C.U.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Abstract :
An efficient approach is presented to the self-consistent, steady-state, large-scale thermal modeling of III-V devices, allowing for multilayered substrates with non-linear thermal properties, thermally conductive metallizations and via holes. Examples are discussed to highlight the model features and to compare the model results with experimental data.<>
Keywords :
III-V semiconductors; monolithic integrated circuits; semiconductor device models; thermal analysis; III-V devices; III-V integrated circuits; multilayered substrates; nonlinear thermal properties; self-consistent steady-state large-scale thermal modeling; thermally conductive metallizations; via holes; Computational efficiency; FETs; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; Isothermal processes; Large scale integration; Temperature sensors; Thermal conductivity; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347389
