Ultra-low-power thermal sensor with silicon-on-insulator (SOI) structure for high-temperature applications

Author

Li, Bin ; Lai, P.T. ; Sin, J.K.O. ; Liu, Bill Yang ; Zheng, X.R. ; Wu, Z.H.

Author_Institution

Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China

Volume

2

fYear

2002

fDate

2002

Firstpage

1419

Abstract

In this work, thermal resistors based on a simple rectangular structure are fabricated on three kinds of substrates thin-film (0.1 μm) silicon-on-insulator (SOI), thick-film (10 μm) SOI and bulk Si, and their characteristics are investigated. Measurements verify that SOI can indeed have additional freedom for increasing the maximum operating temperature (T_max). More importantly, the thin-film SOI thermal resistor not only achieves a T_max as high as 420°C, but also a low operating current of 1 μA, which is about 1,000 times smaller than that of the thick-film SOI counterpart for the same T_max. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications.

Keywords

elemental semiconductors; high-temperature electronics; low-power electronics; silicon; silicon-on-insulator; temperature sensors; 0.1 micron; 1 muA; 10 micron; 420 degC; SOI; Si; high-temperature applications; operating current; operating temperature; rectangular structure; thermal resistors; ultra-low-power thermal sensor; Doping; Implants; Semiconductor films; Semiconductor thin films; Sensor phenomena and characterization; Silicon on insulator technology; Temperature sensors; Thermal sensors; Thin film devices; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2002. Proceedings of IEEE

Print_ISBN

0-7803-7454-1

Type

conf

DOI

10.1109/ICSENS.2002.1037329

Filename

1037329