DocumentCode
2315006
Title
TCAD in power device design and optimization
Author
Fichtner, W. ; Feudel, T. ; Kells, K. ; Lilja, K. ; Litsios, J. ; Muller, S. ; Strecker, N.
Author_Institution
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
93
Lastpage
96
Abstract
The simulation of power semiconductor devices is faced with several problems that are not usually found in VLSI device modeling: the huge and often complicated structures, the interaction with external circuit environment, the effects of surface phenomena, etc. The large variety of device structures and the lack of compact circuit models makes TCAD very important for the design and optimization of these devices.<>
Keywords
CAD; optimisation; power electronics; semiconductor device models; TCAD; design; external circuit; optimization; power semiconductor devices; simulation; surface phenomena; Bipolar transistors; Circuit simulation; Design optimization; Insulated gate bipolar transistors; MOSFETs; Power engineering and energy; Power system modeling; Thyristors; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347391
Filename
347391
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