Title :
Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices
Author :
Keane, Z.K. ; Godfrey, M.C. ; Fricke, S. ; Burke, AM ; Micolich, A.P. ; Hamilton, AR ; Beere, H.E. ; Ritchie, D.A.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We present preliminary measurements of resistively detected nuclear magnetic resonance (NMR) in GaAs-AlGaAs quantum point contacts (QPC). Nuclear spins in the host crystal are polarized through the hyperfine interaction with carriers near the QPC; this polarization can be detected via the four-terminal resistance and manipulated with a radio-frequency magnetic field.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hyperfine interactions; nuclear magnetic resonance; polarisation; quantum point contacts; semiconductor heterojunctions; GaAs-AlGaAs; GaAs-AlGaAs nanostructure devices; GaAs-AlGaAs quantum point contacts; NMR; carriers; four-terminal resistance; hyperfine interaction; nuclear magnetic resonance; nuclear spins; polarization; radiofrequency magnetic field; Magnetic resonance imaging; Nuclear measurements; Optical imaging; Optical polarization;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699720
