Title :
Reactive ion etching of porous silicon for MEMS applications
Author :
Lai, Meifang ; Parish, Giacinta ; Liu, Yinong ; Keating, Adrian J.
Author_Institution :
Sch. of Mech. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.
Keywords :
elemental semiconductors; passivation; porous semiconductors; silicon; sputter etching; MEMS application; Si; dry etching; gas mixture; inductively-coupled-plasma reactive-ion etching; passivated porous silicon; plasma initialisation time; plasma stabilisation time; porous silicon; Argon; Hafnium; Sensor phenomena and characterization;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699721
