Title :
Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors
Author :
Crabbe, E.F. ; Meyerson, B.S. ; Stork, J.M.C. ; Harame, D.L.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Bipolar transistors with phosphorus-doped emitters and sub-50 nm epitaxial bases have been fabricated in a low thermal-cycle process to explore the trade-offs between cutoff frequency, breakdown voltage and Early voltage. Record peak f/sub T/s of 73 GHz for a Si BJT and 113 GHz for a SiGe HBT with respective /spl beta/V/sub A/ products of 630 and 48,400 V were obtained for intrinsic base sheet resistances of 26 and 7 k/spl Omega/spl square/.<>
Keywords :
Ge-Si alloys; bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor materials; silicon; 113 GHz; 50 nm; 73 GHz; Si BJT; Si:P; SiGe HBT; SiGe:P; base sheet resistances; breakdown voltage; cutoff frequency; early voltage; epitaxial bases; fabrication; phosphorus-doped emitters; thermal-cycle; vertical profile optimization; very high frequency bipolar transistors; Annealing; Bipolar transistors; Breakdown voltage; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Passivation; Silicon germanium; Surfaces;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347393
