Title :
High speed SiGe-HBT with very low base sheet resistivity
Author :
Kasper, E. ; Gruhle, A. ; Kibbel, H.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
SiGe-HBT structures were grown in one run by an MBE-process. Essential for obtaining simultaneously high f/sub T/ and low R/sub bi/(0.7 k/spl Omega/spl square/-4 k/spl Omega/spl square/) was the high boron doping of the thin SiGe-base of 5/spl middot/10/sup 19cm/sup 3/. Reduction of the thickness of the SiGe-layer from 40 nm to 25 nm resulted in the increase of f/sub T/ from 50 GHz to above 100 GHz.<>
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor materials; 50 to 100 GHz; MBE growth; SiGe:B; base sheet resistivity; boron doping; cut off frequency; high speed SiGe-HBT; Acceleration; Boron; Conductivity; Doping profiles; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon alloys; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347394
