THz spectroscopy of InAs nanowires

Author

Prabhu, S.S. ; Chaubal, Alok U. ; Deshpande, Amey ; Dhara, Sajal ; Gokhale, Mahesh ; Bhattacharya, Arnab ; Vengurlekar, A.S.

Author_Institution

Tata Inst. of Fundamental Res., Mumbai, India

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We present our investigation of the THz radiation emission from InAs nanowires (NW) grown on a GaAs substrate. We also compare the emitted power of the radiation from InAs nanowires with a p-InAs crystal, a standard THz emitter. The absolute emitted power from InAs nanowires is found to be higher than the THz power emitted from the p-InAs for the same incident power of the infrared excitation. We are investigating the mechanism for this observed power emission enhancement effect.

Keywords

III-V semiconductors; indium compounds; nanowires; semiconductor quantum wires; terahertz wave spectra; GaAs; GaAs substrate; InAs; THz radiation emission; THz spectroscopy; infrared excitation; nanowires; power emission enhancement effect; Bolometers; Gallium arsenide; Magnetic field measurement; Nanowires; Polarization; Radiation detectors; Scanning electron microscopy; Spectroscopy; Substrates; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5324622

Filename

5324622