Title :
An ultra low power lateral bipolar polysilicon emitter technology on SOI
Author :
Dekker, R. ; van der Einden, W.T.A. ; Maas, H.G.R.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Until now the lateral bipolar transistor on SOI has been presented as an option in a CMOS process. In this investigation we show that this device structure is also very attractive for purely bipolar applications, enabling high frequency operation at ultra low power levels. Excellent devices with emitter areas down to 0.15 /spl mu/m/sup 2/, with scaled junction capacitances and f/sub T/ as high as 15 GHz are demonstrated. Due to the properly scaled junction capacitances a f/sub max/ of 15 GHz is realised at collector currents as low as 15 /spl mu/A.<>
Keywords :
bipolar integrated circuits; integrated circuit technology; semiconductor-insulator boundaries; silicon; 15 GHz; 15 muA; SOI; Si; collector currents; cut off frequency; emitter areas; high frequency operation; lateral bipolar transistor; polysilicon emitter technology; scaled junction capacitances; ultra low power; Anisotropic magnetoresistance; Bipolar transistors; CMOS technology; Capacitance; Etching; Fabrication; Frequency; Laboratories; Resists; Silicon;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347395
