DocumentCode :
2315096
Title :
Nanoimprint induced electrical type conversion in HgCdTe
Author :
Martyniuk, M. ; Umana-Membreno, G.A. ; Sewell, R.H. ; Westerhout, R. ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J. ; Faraone, L. ; Macintyre, D.S. ; Thoms, S. ; Ironside, C.N.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
17
Lastpage :
18
Abstract :
We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.
Keywords :
II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; nanolithography; photodetectors; Hg1-xCdxTe; nanoimprint induced electrical type conversion; photovoltaic infrared detectors; Laser beams; Molecular beam epitaxial growth; Optical surface waves; Semiconductor lasers; Surface treatment; Surface waves; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699723
Filename :
5699723
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315096
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