• DocumentCode
    2315096
  • Title

    Nanoimprint induced electrical type conversion in HgCdTe

  • Author

    Martyniuk, M. ; Umana-Membreno, G.A. ; Sewell, R.H. ; Westerhout, R. ; Musca, C.A. ; Dell, J.M. ; Antoszewski, J. ; Faraone, L. ; Macintyre, D.S. ; Thoms, S. ; Ironside, C.N.

  • Author_Institution
    Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    17
  • Lastpage
    18
  • Abstract
    We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.
  • Keywords
    II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; nanolithography; photodetectors; Hg1-xCdxTe; nanoimprint induced electrical type conversion; photovoltaic infrared detectors; Laser beams; Molecular beam epitaxial growth; Optical surface waves; Semiconductor lasers; Surface treatment; Surface waves; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699723
  • Filename
    5699723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2315096