Chemical control of gate length in lateral wrap-gated InAs nanowire FETs

We present a method for attaining chemical control of the gate-length in wrap-gated InAs nanowire transistors where the nanowire is oriented horizontally rather than vertically. A key advantage of this method is its simplicity - precise gate-length control is established with a single wet etch step, and beyond the definition of the source, drain and gate leads, no further lithography is required. The method provides an effective route to producing a wrap-gate that covers the full range from just less than the source-drain contact separation to wrap-gates as small as 300 nm in length.