Title :
Dependence of the phonon drag on Zn concentration in Cd1-x ZnxTe in the range 0<x<0.1
Author :
Vackova, Svitla ; Kdansky, K. ; Scherbak, Larisa ; Fejchouk, Petro ; Ilaschouk, Maria
Author_Institution :
Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic
Abstract :
Our last results have shown a nonlinear dependence of the phonon drag effect on the Zn concentration in single crystals of Cd1-x ZnxTe in the range 0<x<0.1 with the minimum at x=0.04. As the phonon drag (PD) gives information about the interaction between carriers and phonons in the lattice, the reason for the nonlinear dependence can probably be found in anomalous structural changes of the crystal lattice. The PD has been studied by the measurement of the Seebeck effect in Cd1-xZnxTe. Simultaneously a new method for the measurement of the activation energy of shallow acceptors using the temperature gradient has been described
Keywords :
II-VI semiconductors; Seebeck effect; cadmium compounds; crystal structure; electron-phonon interactions; impurity distribution; impurity states; phonon drag; zinc compounds; (CdZn)Te; Cd1-xZnxTe; Seebeck effect; anomalous structural changes; carrier-phonon interaction; crystal lattice; nonlinear Zn concentration dependence; phonon drag; shallow acceptors activation energy; single crystals; temperature gradient; Crystals; Lattices; Optical films; Optical scattering; Phonons; Physics; Solids; Tellurium; Thermoelectricity; Zinc;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667098
