Title :
Degradation-free Ta/sub 2/O/sub 5/ capacitor after BPSG reflow at 850/spl deg/C for high density DRAMs
Author :
Kwon, K.W. ; Park, S.O. ; Kang, C.S. ; Kim, Y.N. ; Ahn, S.T. ; Lee, M.Y.
Author_Institution :
Adv. Technol. Center, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The thermal degradation of the Ta/sub 2/O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By inserting poly-Si between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 64 Mbit DRAMs and excellent leakage current characteristics were obtained.<>
Keywords :
DRAM chips; borosilicate glasses; integrated circuit technology; leakage currents; metal-insulator-semiconductor devices; oxidation; phosphosilicate glasses; tantalum compounds; 64 Mbit; 850 C; BPSG reflow; Ta/sub 2/O/sub 5/ capacitor; TiN-Si-B2O3-P2O5-SiO2; TiN-Si-BPSG; TiN/poly-Si top electrode; high density DRAMs; leakage current; oxidation; thermal degradation; Capacitors; Compressive stress; Etching; Leakage current; Plasma measurements; Plasma temperature; Thermal degradation; Thermal expansion; Thermal stresses; Tin;
Conference_Titel :
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-1450-6
DOI :
10.1109/IEDM.1993.347400
