Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.