A highly reliable metal-to-metal antifuse for high-speed field programmable gate arrays

Author

Takagi, M.T. ; Yoshii, I. ; Ikeda, N. ; Yasuda, H. ; Hama, K.

Author_Institution

Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

5-8 Dec. 1993

Firstpage

31

Lastpage

34

Abstract

This paper describes a novel metal-to-metal antifuse technology for field programmable gate arrays which achieves very high performance and reliability while maintaining full CMOS compatibility. Plasma-CVD SiN with Si/N=1 and Al covered with TiN are used as an antifuse dielectric and electrodes, respectively. This structure allows a desirable characteristics for high-speed FPGAs with off-state reliability of 1.7/spl times/10/sup 5/ years.<>

Keywords

capacitance; electrodes; logic arrays; reliability; 170000 y; Al; SiN; antifuse dielectric; electrodes; field programmable gate arrays; full CMOS compatibility; high-speed FPGAs; high-speed field programmable gate arrays; highly reliable metal-to-metal antifuse; off-state reliability; plasma-CVD SiN; reliability; very high performance; Breakdown voltage; Capacitance; Circuit optimization; Dielectric devices; Electrodes; Field programmable gate arrays; Fuses; Guidelines; Semiconductor device reliability; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-1450-6

Type

conf

DOI

10.1109/IEDM.1993.347405

Filename

347405