DocumentCode
2315300
Title
Nanoelectronic devices: opportunities and challenges
Author
Kern, D.P.
Author_Institution
Inst. of Appl. Phys., Tubingen Univ., Germany
fYear
1993
fDate
5-8 Dec. 1993
Firstpage
7
Abstract
Summary form only given, as follows. Progress in scaling of semiconductor devices has enabled the exponential growth in complexity and functionality of integrated circuits over the past decades. Limits to this development originating from device physics, circuit architecture, but also from materials, processes and possibly economics become apparent. The work on confined electron systems conducted over the past ten years exhibiting quantum interference, quantum size, quantum resonant tunneling and Coulomb blockade effects may well lead to new ways to further increase integrated circuit functionality, if appropriate architectures and solutions to the fabrication problems can be found. Novel switching effects based on motion of single atoms in tunneling configurations, molecular conduction and arrangements possibly combined with self assembly and biological materials represent even more potential alternatives. The paper will discuss key issues associated with different approaches.<>
Keywords
integrated circuits; nanotechnology; quantum interference devices; resonant tunnelling devices; semiconductor devices; Coulomb blockade effects; circuit architecture; complexity; confined electron systems; device physics; economics; exponential growth; fabrication problems; functionality; integrated circuit functionality; integrated circuits; materials; nanoelectronic devices; processes; quantum interference; quantum resonant tunneling; quantum size; scaling; semiconductor devices; single atom motion; switching effects; tunneling configurations; Conducting materials; Interference; Nanobioscience; Nanoscale devices; Resonant tunneling devices; Semiconductor devices; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-1450-6
Type
conf
DOI
10.1109/IEDM.1993.347411
Filename
347411
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