• DocumentCode
    2315300
  • Title

    Nanoelectronic devices: opportunities and challenges

  • Author

    Kern, D.P.

  • Author_Institution
    Inst. of Appl. Phys., Tubingen Univ., Germany
  • fYear
    1993
  • fDate
    5-8 Dec. 1993
  • Firstpage
    7
  • Abstract
    Summary form only given, as follows. Progress in scaling of semiconductor devices has enabled the exponential growth in complexity and functionality of integrated circuits over the past decades. Limits to this development originating from device physics, circuit architecture, but also from materials, processes and possibly economics become apparent. The work on confined electron systems conducted over the past ten years exhibiting quantum interference, quantum size, quantum resonant tunneling and Coulomb blockade effects may well lead to new ways to further increase integrated circuit functionality, if appropriate architectures and solutions to the fabrication problems can be found. Novel switching effects based on motion of single atoms in tunneling configurations, molecular conduction and arrangements possibly combined with self assembly and biological materials represent even more potential alternatives. The paper will discuss key issues associated with different approaches.<>
  • Keywords
    integrated circuits; nanotechnology; quantum interference devices; resonant tunnelling devices; semiconductor devices; Coulomb blockade effects; circuit architecture; complexity; confined electron systems; device physics; economics; exponential growth; fabrication problems; functionality; integrated circuit functionality; integrated circuits; materials; nanoelectronic devices; processes; quantum interference; quantum resonant tunneling; quantum size; scaling; semiconductor devices; single atom motion; switching effects; tunneling configurations; Conducting materials; Interference; Nanobioscience; Nanoscale devices; Resonant tunneling devices; Semiconductor devices; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1993. IEDM '93. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-1450-6
  • Type

    conf

  • DOI
    10.1109/IEDM.1993.347411
  • Filename
    347411