Title :
Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates
Author :
Umana-Membreno, G.A. ; Fehlberg, T.B. ; Kolluri, S. ; Brown, D.F. ; Parish, G. ; Nener, B.D. ; Keller, S. ; Mishra, U.K. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
In this work, we present results of a magneto-transport study of two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on misoriented sapphire substrates. It is shown that the multi-atomic “steps” resulting from epitaxial growth on misoriented substrates leads to significantly lower average two-dimensional electron gas (2DEG) mobility in the direction perpendicular to the interfacial steps which is accompanied by significant broadening of the 2DEG mobility distribution.
Keywords :
Hall effect; III-V semiconductors; MOCVD; aluminium compounds; electron mobility; gallium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 2DEG mobility distribution; Al2O3; GaN-AlGaN; Hall effect; MOCVD; N-polar heterostructures; anisotropic two-dimensional electron gas transport; electron gas mobility; epitaxial growth; magnetotransport study; misoriented sapphire substrates; multiatomic steps; Aluminum gallium nitride; Conductivity; Conductivity measurement; Epitaxial growth; Gallium nitride; MOCVD; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699736
