DocumentCode :
2315336
Title :
Correlating properties of PECVD SiNx layers to deposition parameters
Author :
Vora, K. ; Belay, K. ; Pyke, D.J. ; Karouta, F. ; Jagadish, C.
Author_Institution :
Res. Sch. of Phys. & Eng. (RSPE), Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
197
Lastpage :
198
Abstract :
We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature.
Keywords :
plasma CVD; refractive index; silicon compounds; stress analysis; thin films; PECVD Layers; RF power; SiNx; mechanical stress; refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699737
Filename :
5699737
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315336
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