Title :
Electron-beam induced current measurements of diffusion length in Si doped MOCVD grown GaN
Author :
Wee, D. ; Parish, G. ; Nener, B.D.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.
Keywords :
EBIC; III-V semiconductors; MOCVD; carrier lifetime; gallium compounds; semiconductor growth; semiconductor thin films; silicon; wide band gap semiconductors; GaN:Si; MOCVD; electron beam acceleration voltage; electron-beam induced current measurements; gallium nitride growth; minority carrier diffusion length; voltage 15 kV; voltage 8 kV; Australia; Current measurement; Gallium nitride; Junctions; Scanning electron microscopy; Semiconductor device measurement; Spontaneous emission;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699739
