Title :
A comparative study of transistors based on wurtzite and zincblende InAs nanowires
Author :
Williams, M. ; Burke, A.M. ; Joyce, H.J. ; Micolich, A.P. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We report a comparative study of the electronic properties of nominally identical nanowire field-effect transistor (NW-FET) devices produced using 50 nm diameter InAs nanowires that differ only in phase: ZB on the one hand, and WZ on the other. We find much higher current densities in the ZB NW-FETs, and on/off ratios of up to 100.
Keywords :
III-V semiconductors; current density; field effect transistors; indium compounds; nanofabrication; nanowires; semiconductor quantum wires; InAs; current density; electronic properties; nanowire field-effect transistor; on-off ratio; wurtzite nanowires; zinc-blende nanowires; Lead; Optical devices; Optical scattering; Optical switches; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699740
