DocumentCode :
2315407
Title :
Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1−xO/ZnO heterostructure
Author :
Ye, J.D. ; Lo, G.Q. ; Gu, S.L. ; Teo, K.L.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
205
Lastpage :
206
Abstract :
In this work, we demonstrate the layer-by-layer epitaxy of Mg-composition graded ZnMgO/ZnO heterostructure on sapphire substrate by MOVPE technique. The polarization field tailored by the graded heterostructure induces wide electron slabs with high mobility at low temperature. The transport properties and mechanisms have been discussed in details.
Keywords :
II-VI semiconductors; MOCVD; magnesium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; Al2O3; MOVPE technique; Mg-composition graded ZnMgO-ZnO heterostructure; MgxZn1-xO-ZnO; graded pseudomorph heterostructure; layer-by-layer epitaxy; polarization field; polarization induced high mobility wide electron slabs; sapphire substrate; transport mechanisms; transport properties; Epitaxial growth; Epitaxial layers; Temperature measurement; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699741
Filename :
5699741
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315407
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