• DocumentCode
    2315407
  • Title

    Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1−xO/ZnO heterostructure

  • Author

    Ye, J.D. ; Lo, G.Q. ; Gu, S.L. ; Teo, K.L.

  • Author_Institution
    Inst. of Microelectron., Singapore, Singapore
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    205
  • Lastpage
    206
  • Abstract
    In this work, we demonstrate the layer-by-layer epitaxy of Mg-composition graded ZnMgO/ZnO heterostructure on sapphire substrate by MOVPE technique. The polarization field tailored by the graded heterostructure induces wide electron slabs with high mobility at low temperature. The transport properties and mechanisms have been discussed in details.
  • Keywords
    II-VI semiconductors; MOCVD; magnesium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; Al2O3; MOVPE technique; Mg-composition graded ZnMgO-ZnO heterostructure; MgxZn1-xO-ZnO; graded pseudomorph heterostructure; layer-by-layer epitaxy; polarization field; polarization induced high mobility wide electron slabs; sapphire substrate; transport mechanisms; transport properties; Epitaxial growth; Epitaxial layers; Temperature measurement; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699741
  • Filename
    5699741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2315407