DocumentCode
2315503
Title
Growth of ZnS heterostructures for optoelectronic applications
Author
Chen, Z.G. ; Zou, J. ; Lu, G. O Max
Author_Institution
Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
215
Lastpage
216
Abstract
The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende structured trunks and hexagonal wurtzite structured branches, indicating that such heterostructures can be used as unique electromechanical and optoelectronic components in laser and light emitting display devices.
Keywords
II-VI semiconductors; cathodoluminescence; energy gap; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; zinc compounds; HRTEM; UV emission; ZnS; bandgap emission; cathodoluminescence; dual phase tetrapod tree-like heterostructure; electron volt energy 3.68 eV; electron volt energy 3.83 eV; growth mechanism; hexagonal wurtzite structured branches; nanowires; polarity induced growth; temperature 293 K to 298 K; zinc blende structured trunks; Brain modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699747
Filename
5699747
Link To Document