• DocumentCode
    2315503
  • Title

    Growth of ZnS heterostructures for optoelectronic applications

  • Author

    Chen, Z.G. ; Zou, J. ; Lu, G. O Max

  • Author_Institution
    Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    215
  • Lastpage
    216
  • Abstract
    The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende structured trunks and hexagonal wurtzite structured branches, indicating that such heterostructures can be used as unique electromechanical and optoelectronic components in laser and light emitting display devices.
  • Keywords
    II-VI semiconductors; cathodoluminescence; energy gap; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; zinc compounds; HRTEM; UV emission; ZnS; bandgap emission; cathodoluminescence; dual phase tetrapod tree-like heterostructure; electron volt energy 3.68 eV; electron volt energy 3.83 eV; growth mechanism; hexagonal wurtzite structured branches; nanowires; polarity induced growth; temperature 293 K to 298 K; zinc blende structured trunks; Brain modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699747
  • Filename
    5699747