Title :
Growth of ZnS heterostructures for optoelectronic applications
Author :
Chen, Z.G. ; Zou, J. ; Lu, G. O Max
Author_Institution :
Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
Abstract :
The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende structured trunks and hexagonal wurtzite structured branches, indicating that such heterostructures can be used as unique electromechanical and optoelectronic components in laser and light emitting display devices.
Keywords :
II-VI semiconductors; cathodoluminescence; energy gap; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; zinc compounds; HRTEM; UV emission; ZnS; bandgap emission; cathodoluminescence; dual phase tetrapod tree-like heterostructure; electron volt energy 3.68 eV; electron volt energy 3.83 eV; growth mechanism; hexagonal wurtzite structured branches; nanowires; polarity induced growth; temperature 293 K to 298 K; zinc blende structured trunks; Brain modeling;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699747
