Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Author

Van Beveren, L. H Willems ; Hueb, H. ; Starrett, R.P. ; Morello, A.

Author_Institution

ARC Centre of Excellence for Quantum Comput. Technol., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

221

Lastpage

222

Abstract

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus- doped silicon metal-oxide field-effect-transistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.

Keywords

MOSFET; elemental semiconductors; paramagnetic resonance; phosphorus; silicon; EDMR; MOSFET; Si:P; biasing conditions; electrically detected magnetic resonance; electron-spin resonance; hyperfine lines; metal-oxide field-effect-transistors; microwave power; radio frequency readout; radio frequency reflectometry; Broadband communication; MOSFET circuits; Microwave circuits; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699750

Filename

5699750