DocumentCode :
2315581
Title :
Resistance switching in polycrystalline NiOx thin film
Author :
Kim, Tae-Hyun ; Saleh, Muhammad N. ; Kim, Sung ; Venkatachalam, Dinesh K. ; Belay, Kidane ; Burgess, Andrew ; Strumpp, Stephan ; Elliman, Robert G.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
223
Lastpage :
224
Abstract :
Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.
Keywords :
dielectric thin films; electrical resistivity; ion beam effects; nickel compounds; switching; thermochemistry; NiOx; dielectric films; field-induced conductive filament; joule heating; polycrystalline thin film; resistance switching; thermochemical model; Dielectrics; Films; Nonvolatile memory; Resistance; Semiconductor device measurement; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
ISSN :
1097-2137
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
Type :
conf
DOI :
10.1109/COMMAD.2010.5699751
Filename :
5699751
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2315581
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