• DocumentCode
    2315581
  • Title

    Resistance switching in polycrystalline NiOx thin film

  • Author

    Kim, Tae-Hyun ; Saleh, Muhammad N. ; Kim, Sung ; Venkatachalam, Dinesh K. ; Belay, Kidane ; Burgess, Andrew ; Strumpp, Stephan ; Elliman, Robert G.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    Resistive switching properties of polycrystalline NiOx dielectric films are investigated utilizing thermo-chemical model in which a field-induced conductive filament is formed and broken by joule heating.
  • Keywords
    dielectric thin films; electrical resistivity; ion beam effects; nickel compounds; switching; thermochemistry; NiOx; dielectric films; field-induced conductive filament; joule heating; polycrystalline thin film; resistance switching; thermochemical model; Dielectrics; Films; Nonvolatile memory; Resistance; Semiconductor device measurement; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
  • Conference_Location
    Canberra, ACT
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-7334-2
  • Electronic_ISBN
    1097-2137
  • Type

    conf

  • DOI
    10.1109/COMMAD.2010.5699751
  • Filename
    5699751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2315581