Title :
Investigation on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths
Author :
Beck, Alexandre ; Offranc, Olivier ; Zaknoune, Mohammed ; Peytavit, Emilien ; Ducournau, Guillaume ; Akalin, Tahsin ; Wallart, Xavier ; Lampin, Jean-françois
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol., Univ. de Lille 1, Villeneuve d´´Ascq, France
Abstract :
We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; photodiodes; semiconductor epitaxial layers; GaAsSb-InP; epitaxial structure; photomixer; uni-travelling-carrier photodiode; wavelength 1.55 mum; Absorption; Electrons; Etching; Fabrication; Horn antennas; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Submillimeter wave technology;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5324658
