Title :
High-temperature oxidation behavior of PbTe and oxidation-resistive glass coating
Author :
Chen, Lidong ; Goto, Takashi ; Tu, Rong ; Hirai, Toshio
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
Oxidation of lead telluride (PbTe) is a serious issue for thermoelectric applications. In the present study, the oxidation behavior of PbTe was studied at oxygen partial pressures of 10 Pa to 0.1 MPa in the temperature range between 700 and 900 K. At moderately low oxygen partial pressures and high temperatures, mass loss was observed and the oxide layers (Pb3TeO5 or Pb5TeO 7) formed on the PbTe surface. At high oxygen partial pressures and low temperatures, mass gain was observed and PbTeO3 or Pb2TeO4/PbTeO3 oxide layers formed on the PbTe surface. When the temperature was higher than 819 K, PbTeO3 melted and dropped down from the specimen. Oxidation-resistive glasses were coated on the PbTe surface. The glass-coated PbTe showed excellent oxidation resistance showing no mass change at 773 K
Keywords :
IV-VI semiconductors; lead compounds; oxidation; thermoelectricity; 10 Pa to 0.1 MPa; 700 to 900 K; O2 partial pressure dependence; Pb2TeO4-PbTeO3; Pb3TeO5; Pb5TeO7; PbTe; PbTeO3; mass gain; mass loss; oxidation behavior; oxidation resistance; oxidation-resistive glass coating; oxide layers; temperature dependence; thermoelectric applications; Coatings; Glass; Lead; Oxidation; Power generation; Surface resistance; Tellurium; Temperature distribution; Thermoelectricity; Waste heat;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667101
