Fabrication and characterization of integrated field emission diodes using self-assembled-silicon-nanostructure cathodes

CMOS process compatible integrated diodes using self-assembled-silicon-nanostructure cathodes have been fabricated and characterized at atmospheric pressure. The silicon nanostructures are atomically sharp and about 10 nm high, self-assembled on a silicon substrate by electron beam annealing (EBA). The electrical conduction characteristics of the devices show Fowler-Nordheim field emission at high fields. A field enhancement factor, β, of about 5×10⁵ cm^-1 and silicon effective work function, Φ_eff, of about 0.21 eV are reported for the devices.