Title :
Periodic nanowire structures
Author :
Bakkers, Erik P.A.M. ; Algra, Rienk ; Hocevar, Moira ; Borgström, Magnus T. ; Immink, George ; Ketelaars, Bas ; Feiner, Lou-Fe ; Van Enckevort, Willem J P ; Vlieg, Elias ; Verheijen, Marcel A.
Author_Institution :
Appl. Phys., Photonics & Semicond. Nanophysics, Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.
Keywords :
II-VI semiconductors; crystal structure; gallium compounds; impurities; indium compounds; nanowires; semiconductor doping; semiconductor superlattices; twinning; zinc; GaP:Zn; InP:Zn; cross-sectional shape; gallium phosphide nanowire; impurity dopants; indium phosphide nanowire; long-range order; twinning superlattices; wire diameter; zinc blende crystal structure; zinc dopant concentration; Gallium; Shape;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699764
