Periodic nanowire structures

Author

Bakkers, Erik P.A.M. ; Algra, Rienk ; Hocevar, Moira ; Borgström, Magnus T. ; Immink, George ; Ketelaars, Bas ; Feiner, Lou-Fe ; Van Enckevort, Willem J P ; Vlieg, Elias ; Verheijen, Marcel A.

Author_Institution

Appl. Phys., Photonics & Semicond. Nanophysics, Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

33

Lastpage

34

Abstract

We show control of the crystal structure of indium phosphide (InP) and gallium phosphide (GaP) nanowires by impurity dopants. More importantly, we demonstrate that we can, once we have enforced the zinc blende crystal structure, induce twinning superlattices with long-range order in the length direction in the nanowires. The spacing of the superlattices is tuned by the wire diameter and the zinc dopant concentration. These findings have been quantitatively modelled based on the cross-sectional shape of the zinc-blende nanowires.

Keywords

II-VI semiconductors; crystal structure; gallium compounds; impurities; indium compounds; nanowires; semiconductor doping; semiconductor superlattices; twinning; zinc; GaP:Zn; InP:Zn; cross-sectional shape; gallium phosphide nanowire; impurity dopants; indium phosphide nanowire; long-range order; twinning superlattices; wire diameter; zinc blende crystal structure; zinc dopant concentration; Gallium; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on

Conference_Location

Canberra, ACT

ISSN

1097-2137

Print_ISBN

978-1-4244-7334-2

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2010.5699764

Filename

5699764