Title :
High frequency mode-locking of diode lasers
Author :
Bryce, A.C. ; Hou, L. ; Haji, M. ; Dylewicz, R. ; Stolarz, P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss of the harmonic effect.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; semiconductor lasers; AlGaInAs; diode lasers; frequency 160 GHz; high frequency mode-locking; reflectivity; single deeply etched intracavity reflectors; stable harmonic mode-locking;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
978-1-4244-7334-2
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2010.5699765
