DocumentCode
2315789
Title
High frequency mode-locking of diode lasers
Author
Bryce, A.C. ; Hou, L. ; Haji, M. ; Dylewicz, R. ; Stolarz, P.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
3
Lastpage
4
Abstract
The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss of the harmonic effect.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; semiconductor lasers; AlGaInAs; diode lasers; frequency 160 GHz; high frequency mode-locking; reflectivity; single deeply etched intracavity reflectors; stable harmonic mode-locking;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on
Conference_Location
Canberra, ACT
ISSN
1097-2137
Print_ISBN
978-1-4244-7334-2
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2010.5699765
Filename
5699765
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